Oxime derivatives and the use thereof as latent acids

C - Chemistry – Metallurgy – 07 – C

Patent

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C07C 309/65 (2006.01) A61K 6/08 (2006.01) C07C 251/62 (2006.01) C07C 309/00 (2006.01) C07C 309/73 (2006.01) C07C 317/32 (2006.01) C07C 323/47 (2006.01) C07C 381/00 (2006.01) C07D 213/53 (2006.01) C07D 295/135 (2006.01) C07D 307/52 (2006.01) C07D 317/58 (2006.01) C07D 319/18 (2006.01) C07D 333/22 (2006.01) C09D 11/02 (2006.01) G03F 7/004 (2006.01)

Patent

CA 2302875

Compounds of formula I, II and III, wherein (see formula I) wherein R1 is for example hydrogen, C1-C12alkyl, C3-C30cycloalkyl, C2- C12alkenyl, C4-C8cycloalkenyl, phenyl, which is unsubstituted or substituted, naphthyl, anthracyl or phenanthryl, unsubstituted or substituted, heteroaryl radical which is unsubstituted or substituted; wherein all radicals R1 with the exception of hydrogen can additionally be substituted by a group having a -O-C-bond or a -O-Si-bond which cleaves upon the action of an acid; R'1 is for example phenylene, naphthylene, diphenylene or oxydiphenylene, wherein these radicals are unsubstituted or substituted; R2 is halogen or C1-C10haloalkyl; R3 is for example C1- C18alkylsulfonyl, phenylsulfonyl, naphthylsulfonyl, anthracylsulfonyl or phenanthrylsulfonyl, wherein the groups are unsubstituted or substituted, or R3 is e.g. C2-C6haloalkanoyl, or halobenzoyl, R'3 is for example phenylenedisulfonyl, naphthylenedisulfonyl, diphenylenedisulfonyl, or oxydi-phenylenedisulfonyl, wherein these radicals are unsubstituted or substituted, X is halogen; are especially suitable as phototsensitive acid-donors in chemically amplified resist formulations.

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