G - Physics – 01 – N
Patent
G - Physics
01
N
324/25
G01N 27/12 (2006.01) G01N 27/404 (2006.01) G01N 33/00 (2006.01)
Patent
CA 1297948
ABSTRACT OF THE DISCLOSURE An ozone gas sensor comprising a film type semiconductor element including a substrate and a semiconductor film consisting of a metallic oxide formed on the substrate, and a layer of silica formed on a surface of the film type semiconductor element. At least one thin film layer of one or a plurality of types selected from metals and metal oxides is interposed between the semiconductor film and the layer of silica.
579613
Kasahara Riichiro
Takada Tadashi
Marks & Clerk
New Cosmos Electric Co. Ltd.
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