P and n-type microcrystalline semiconductor alloy material...

H - Electricity – 01 – L

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345/23, 204/96.0

H01L 31/08 (2006.01) H01L 31/0368 (2006.01) H01L 31/075 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1310296

ABSTRACT An n-type. microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

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