P-i-n and avalanche photodiodes

Details P-i-n and avalanche photodiodes P-i-n and avalanche photodiodes

H - Electricity

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345/24

H01L 31/00 (2006.01) H01L 31/105 (2006.01) H01L 31/107 (2006.01)

Patent

CA 1233549

- 13 - IMPROVED p-i-n AND AVALANCHE PHOTODIODES Abstract High-speed p-i-n and avalanche photodetectors (photodiodes) use a heavily doped buried layer to greatly limit minority carriers generated by incident light in the buried layers and the substrates of the devices from reaching the cathodes and thus enhances response time while substantially decreasing dark current. A p-i-n diode of this type with a 1.1 square millimeter active area can operate with 4 volt reverse bias and is capable of having edge rise and fall times in the 4 nanosecond range.

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