P-i-n photodiodes with transparent conductive contacts

Details P-i-n photodiodes with transparent conductive contacts P-i-n photodiodes with transparent conductive contacts

H - Electricity

01

L

H01L 31/0224 (2006.01) H01L 31/0216 (2006.01) H01L 31/105 (2006.01)

Patent

CA 2087356

This invention pertains to a p-i-n In0.53 Ga0.47 As photodiode having an optically transparent composite top electrode consisting of a thin semitransparent metal layer from 10 to 40 nm thick and a transparent cadmium tin oxide (CTO) layer from 90 to 600 nm thick. The metal layer makes a non-alloyed ohmic contact to the semiconductor surface, acts as a barrier between the semiconductor and the CTO preventing oxidation of the semiconductor from the O2 in the plasma during reactive magnetron sputtering of the CTO layer, and prevents formation of a p-n junction between the semiconductor and CTO. The CTO functions as the n or p contact, an optical window and an anti-reflection coating. The top electrode also avoids shadowing of the active layer by the top electrode, thus allowing greater collection of incident light. Since the top electrode is non-alloyed, inter diffusion into the i- region is not relevant, which avoids an increased dark current.

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