P-n junction devices having improved turn-off characteristics

Details P-n junction devices having improved turn-off characteristics P-n junction devices having improved turn-off characteristics

H - Electricity

01

L

356/161

H01L 29/50 (1980.01)

Patent

CA 1117667

P-N JUNCTION DEVICES HAVING IMPROVED TURN-OFF CHARACTERISTICS Abstract of the Disclosure A junction semiconductor device having improved turn-off characteristics and especially having decreased turn-off time is provided having a region of limited extent included in the device and characterized by decreased excess carrier lifetime. The decreased lifetime region is located at or near the point of highest excess carrier concentration during the recombination phase of device turn-off.

305581

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