P-n-p diamond transistor

Details P-n-p diamond transistor P-n-p diamond transistor

H - Electricity

01

L

H01L 21/20 (2006.01) H01L 21/331 (2006.01) H01L 29/16 (2006.01) H01L 29/735 (2006.01)

Patent

CA 2046284

The present invention provides a P-N-P diamond transistor and a method of manufacture thereof. The transistor comprises a diamond substrate having two p-type semiconducting regions separated by an insulating region with an n-type semiconducting layer established by chemical vapour deposition. Preferably the p-type regions are obtained by doping with boron and controlling the concentration of nitrogen impurities by the use of nitrogen getters. The n-type layer preferably contains phosphorus.

Transistor PNP à diamant (10) et méthode de fabrication associée. Le transistor (10) comprend un substrat de diamant (12) ayant deux régions semiconductrices de type p (14) séparées par une région isolante (16) munie d'une couche semiconductrice de type n (18) établie par dépôt chimique en phase vapeur. De préférence, les régions de type p (14) sont obtenues par dopage au bore et contrôle de la concentration d'impuretés d'azote au moyen de dégazeurs. La couche de type n (18) contient de préférence du phosphore.

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