P-type-epitaxial-base transistor with base-collector...

Details P-type-epitaxial-base transistor with base-collector... P-type-epitaxial-base transistor with base-collector...

H - Electricity

01

L

356/124

H01L 27/04 (2006.01) H01L 21/74 (2006.01) H01L 27/07 (2006.01) H01L 29/10 (2006.01)

Patent

CA 1041226

A P-TYPE-EPITAXIAL-BASE TRANSISTOR WITH BASE-COLLECTOR SCHOTTKY DIODE CLAMP Abstract of the Disclosure A clamped epi-base NPN transistor with very short saturation time constant is obtained by ion implantation in the P-type base region to convert a portion thereof to N- conductivity type contig- uous to the collector reach-through region. The converted region is contracted by an extended metal electrode which also contacts the base region. The metal electrode establishes ohmic contact to the base region and Schottky diode contact to the converted region and to the collector region connected thereto.

255056

Affiliated with

Also associated with

Rating

P-type-epitaxial-base transistor with base-collector... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with P-type-epitaxial-base transistor with base-collector..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and P-type-epitaxial-base transistor with base-collector... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-746908