Parallel semiconductor cell temperature control

H - Electricity – 02 – M

Patent

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Details

H02M 7/162 (2006.01) H02M 1/00 (2006.01)

Patent

CA 2144615

There is disclosed a system for controlling the junction temperature of gated semiconductor cells connected in parallel. Briefly, a temperature sensor is provided for each cell to provide a signal proportional to the temperature of the cell. This signal (proportional to temperature) is monitored by a controller which selectively energizes the cells to allow current flow through the cells when the temperature reading of a cell is below average temperatures. Cells having temperatures above average have conduction periods reduced. By selectively energizing cells responsive to cell temperature, fewer cells are required to ensure continuous current levels passing through the cells do not result in destructive junction temperatures damaging the semiconductor device in each cell.

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