Parameter independent fet sense amplifier

Details Parameter independent fet sense amplifier Parameter independent fet sense amplifier

H - Electricity

03

F

330/22, 352/81

H03F 3/45 (2006.01) G11C 11/40 (2006.01) G11C 11/4091 (2006.01)

Patent

CA 1084597

PARAMETER INDEPENDENT FET SENSE AMPLIFIER Abstract of the Disclosure A high speed ratioless FET sense amplifier for sensing stored information in a semiconductor memory system. The amplifier is capable of sensing very small voltage signals provided by charges stored in a plural- ity of single FET/capacitor memory cells. The amplifier comprises a pair of cross-coupled FET devices coupled to a pair of bit/sense lines by clock signal responsive switching devices. The source electrodes of the cross- coupled FETs are each independently capacitively coupled to another clock signal and also to a source of low potential through a pair of clock driven source pull- down FETs. The amplifier uses minimal size devices and is process parameter independent.

252738

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