H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/37
H01L 29/74 (2006.01)
Patent
CA 1160758
RD-8916 A PARTIALLY ISOLATED AMPLIFYING GATE THYRISTOR WITH CONTROLLABLE dv/dt COMPENSATION, HIGH di/dt CAPABILITY, AND HIGH SENSITIVITY Abstract of the Disclosure A semiconductor device used for high voltage applications is disclosed. The disclosed semiconductor device is an amplifying gate thyristor having a gate region, a pilot thyristor, a main thyristor and a compen- sation region. The compensation region in conjunction with a circuit arrangement and contact regions disposed on the amplifying gate thyristor, supplies a bias voltage developed by dv/dt currents flowing within the compen- sation region that is of equal potential to a voltage developed within the gate region by the dv/dt currents flowing within the gate region. The circuit arrangement, in conjunction with the contact regions, improves the dv/dt capability of the pilot thyristor without causing subsequent degradation of the dv/dt capability of the main thyristor. The circuit may be further arranged to provide an improvement to the dv/dt capability of the main thyristor. Similarly, the contact regions may be further arranged to provide an improvement to the di/dt capability of the pilot thyristor of the device. The various disclosed embodiments also provide for further improvements to the gate sensitivity of the amplifying gate thyristor.
376680
Company General Electric
Eckersley Raymond A.
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