Partially storing control circuit used in a memory unit

Details Partially storing control circuit used in a memory unit Partially storing control circuit used in a memory unit

G - Physics

06

F

354/241

G06F 13/14 (2006.01) G06F 12/04 (2006.01)

Patent

CA 2011632

Partial-store access performed to a plurality of memory banks in a memory unit, every bank, through an interleave method is carried out by: reading out one word read-data from the memory banks in an access time; registering one word write-data including partially storing data in store-data registers having the same number of the memory banks, in a state of overwriting, initially and at least one time successively within the access time; registering positional signal for the partially storing data in position-signal registers having the same number of the memory banks, corresponding to registering of the storing data; combining the read out one word read-data with the registered partially storing data, replacing preceded data in the one word read-data with the partially storing data registered, using the registered positional signals, producing a rewrite-data, after the access time; and restoring the rewrite-data in the memory banks.

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