Passivated silicon substrate

Details Passivated silicon substrate Passivated silicon substrate

H - Electricity

01

L

H01L 21/471 (2006.01) H01L 21/314 (2006.01) H01L 21/473 (2006.01) H01L 29/34 (2006.01)

Patent

CA 2074809

2074809 9111827 PCTABS00006 A passivated silicon substrate structure (10) is set forth. A silicon substrate has a surface region (14) covered by a silicon dioxide layer (18) no more than about 1,000 Angstroms thick. A silicon oxynitride layer (20) of no more than about 300 Angstroms thick covers the silicon dioxide layer. The silicon oxynitride layer is produced by reaction of ammonia, hydrazine or methyl amine with an initially thicker silicon dioxide layer. A silicon nitride layer (22) covers the silicon oxynitride layer. The silicon nitride layer is at least about 250 Angstroms thick. It is produced by chemical vapor deposition. A passivation layer as set forth above provides electric insulation and is highly resistant to moisture attack.

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