Passivation of gallium arsenide electron devices

Details Passivation of gallium arsenide electron devices Passivation of gallium arsenide electron devices

H - Electricity

01

L

148/3.8

H01L 21/314 (2006.01) H01L 21/329 (2006.01) H01L 31/0216 (2006.01)

Patent

CA 1299982

Abstract of the Disclosure A method of passivating a gallium arsenide electronic device by depositing a sulfide film on a portion on the substrate to be passivated for providing an ideal interface layer wherein surface state density is substantially reduced. The resulting electrical performance of the device is significantly greater than similar devices which have not been subject to passivation. The device may be a heterojunction bipolar transistor, PIN diode or field effect transistor.

549741

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