Passivation of gallium arsenide surfaces

Details Passivation of gallium arsenide surfaces Passivation of gallium arsenide surfaces

H - Electricity

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148/3.8

H01L 21/31 (2006.01) H01L 21/314 (2006.01) H01L 21/324 (2006.01)

Patent

CA 1299983

Abstract of the Disclosure A method of passivating the surface of a gallium arsenide substrate by cleaning the gallium arsenide substrate in an etching solution and depositing a sulfide film on the substrate. The step of depositing the sulfide film is preferably performed by spin-on of a sodium sulfide solution, followed by drying or annealing. The resulting passivated surface exhibits superior surface recombination velocity characteristics compared to prior art passivation techniques, thereby making possible superior solid state device operating characteristics.

549742

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