Passivation of porous semiconductors

Details Passivation of porous semiconductors Passivation of porous semiconductors

H - Electricity

01

L

H01L 21/47 (2006.01) H01L 21/312 (2006.01) H01L 21/477 (2006.01)

Patent

CA 2340535

A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structure are found to have unprecedented stability.

Affiliated with

Also associated with

Rating

Passivation of porous semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Passivation of porous semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Passivation of porous semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1557928