Passivation of semiconductor elements

Details Passivation of semiconductor elements Passivation of semiconductor elements

H - Electricity

01

L

356/178

H01L 21/64 (2006.01) H01L 21/56 (2006.01) H01L 23/29 (2006.01) H01L 23/31 (2006.01)

Patent

CA 1111149

Abstract of the Disclosure The present invention relates to a process for passivating the surfaces of semiconductor elements. Silicon layers which are vapour- deposited on the surface of semiconductor elements have the effect of a permanent stability on the characteristic curves of the semiconductor element. These silicon layers are annealed, in order to reduce the inverse currents. This effects a permanent lowering of the inverse-current level. This invention may be used on all semiconductor elements.

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