Pattern-forming material and pattern formation method

Details Pattern-forming material and pattern formation method Pattern-forming material and pattern formation method

G - Physics

03

F

96/150

G03F 7/075 (2006.01)

Patent

CA 1335542

Pattern-forming material useful in producing highly accurate submicron patterns having unusually high aspect ratios at superior resolutions are obtained by using a solvent-soluble polyorganosiloxane having SiO4/2 units and at least one other organosiloxane unit which contains a high energy radiation sensitive group. The polyorganosiloxane has a softening temperature greater than room temperature.

582506

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