Patterning method for epitaxial lift-off processing

Details Patterning method for epitaxial lift-off processing Patterning method for epitaxial lift-off processing

H - Electricity

05

B

356/177, 345/62

H05B 33/10 (2006.01) H01L 21/20 (2006.01) H01L 21/467 (2006.01)

Patent

CA 2034986

Abstract of the Disclosure In the fabrication of microelectronic, optoelectronic, and photonic devices, methods are being used which involve selective processing of material in the presence of a patterned mask layer; for example, such processing may involve etching. Typically, mask layer material is chosen on the basis of response to suitable radiation, allowing for patterning by selective irradiation followed by selective removal of mask layer material. However, in so-called epitaxial lift-off processing, material (2/3) to be processed may be covered with a support layer (4) of a material which is selected in view of desired mechanical and thermal porperties, and which is not amenable to patterning by radiation. A method is described which provides for patterning of such layer by heated mechanical means (5,9) subh as, e.g., a heated stylus or roller.

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