Pbs-pbse ir detector arrays and fabrication method

Details Pbs-pbse ir detector arrays and fabrication method Pbs-pbse ir detector arrays and fabrication method

H - Electricity

01

L

345/1, 148/3.5

H01L 31/04 (2006.01) H01L 21/368 (2006.01) H01L 27/148 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1223653

ABSTRACT OF THE DISCLOSURE A silicon wafer is provided which does not employ individually bonded leads between the IR sensitive elements and the input stages of multiplexers. The wafer is first coated with lead selenide in a first detector array area and is thereafter coated with lead sulfide within a second detector array area. The described steps result in the direct chemical deposition of lead selenide and lead sulfide upon the silicon wafer to eliminate individual wire bonding, bumping, flip chiping, planar interconnecting methods of connecting detector array elements to silicon chip circuitry, e.g., multiplexers, to enable easy fabrication of very long arrays. The electrode structure employed, produces an increase in the electrical field gradient between the electrodes for a given volume of detector material, relative to conventional electrode configurations.

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