H - Electricity – 01 – S
Patent
H - Electricity
01
S
345/32
H01S 3/10 (2006.01) H01S 5/22 (2006.01) H01S 5/40 (2006.01) H01S 5/042 (2006.01) H01S 5/227 (2006.01)
Patent
CA 1150811
- 1 - Abstract: A phase-locked semiconductor laser device has a laminated structure in which a plurality of first semi- conductor layers having substantially the same composition are so stacked as to be sandwiched between second semi- conductor layers having a band gap wider and a refractive index lower than the first semiconductor layer. A third semiconductor layer is disposed in contact with at least one side face of the laminated structure parallel to the traveling direction of a laser beam. The third layer is not narrower in band gap and not higher in refractive index than the first semiconductor layers and does not have the same conductivity type as at least the first semiconductor layers. Current is injected into an inter- face between the first semiconductor layers and the third semiconductor layer on the side face of the laminated structure. An optical resonator for the laser beam is also provided. Laser beams from the plurality of active regions will have a coherency of wavelength and phase, and a high optical output.
401507
Kajimura Takashi
Kuroda Takao
Matsuda Hiroshi
Nakashima Hisao
Umeda Jun-Ichi
Hitachi Ltd.
Kirby Eades Gale Baker
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