Phase-locked semiconductor laser device

Details Phase-locked semiconductor laser device Phase-locked semiconductor laser device

H - Electricity

01

S

345/31

H01S 5/40 (2006.01)

Patent

CA 1190635

-1- Abstract: A semiconductor laser device has a semiconductor substrate and a semiconductor assembly for optical confine- ment which includes an active layer and cladding layers. A first electrode is disposed on this semiconductor assembly, a second electrode is disposed on the substrate side, and layers are provided to constitute an optical resonator. The invention is characterized in that a plurality of regions which, in effect, cause a variation of a complex refractive index for a laser beam in a direction intersecting a traveling direction of the laser beam are discretely disposed over or under said active layer, local emissions of adjacent lasers giving rise to a nonlinear interaction therebetween. The result is a phase-locked semiconductor laser device of high quality and high optical output.

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