Phase-separated dielectric structure fabrication process

Details Phase-separated dielectric structure fabrication process Phase-separated dielectric structure fabrication process

H - Electricity

01

L

H01L 21/02 (2006.01) H01L 21/324 (2006.01) H01L 49/02 (2006.01)

Patent

CA 2627393

A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

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