Phase-separated dielectric structure fabrication process

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

H01L 21/02 (2006.01) H01L 21/324 (2006.01) H01L 49/02 (2006.01)

Patent

CA 2627393

A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Phase-separated dielectric structure fabrication process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase-separated dielectric structure fabrication process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase-separated dielectric structure fabrication process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1739774

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.