H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/18 (2006.01) H01S 5/065 (2006.01) H01S 5/187 (2006.01) H01S 5/40 (2006.01) H01S 5/026 (2006.01) H01S 5/0683 (2006.01) H01S 5/12 (2006.01)
Patent
CA 2364817
A surface emitting semiconductor laser is shown having a semiconductor lasing structure having an active layer, opposed cladding layers contiguous to said active layer, a substrate, and electrodes by which current can be injected into the semiconductor lasing structure. Also included is a distributed diffraction grating having periodically alternating elements, each of the elements being characterized as being either a high gain element or a low gain element. Each of the elements has a length, the length of the high gain element and the length of the low gain element together defining a grating period, where the grating period is in the range required to produce an optical signal in the optical telecommunications signal band. A phase shifting structure is provided in the center of the grating to cause a peak intensity to occur over the center of the cavity by altering a mode profile of the output signal, while spatial hole burning arising from said altered mode profile is ameliorated.
Li Wei
Shams-Zadeh-Amiri Ali M.
Photonami Inc.
Piasetzki & Nenniger Llp
LandOfFree
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