Phase-shifting production mask for photolithography

Details Phase-shifting production mask for photolithography Phase-shifting production mask for photolithography

G - Physics

03

F

95/94.5

G03F 5/00 (2006.01) G03F 1/00 (2006.01) G03F 7/20 (2006.01)

Patent

CA 1190082

PHASE-SHIFTING PRODUCTION MASK FOR PHOTOLITHORAPHY Abstract of the Disclosure A phase-shifting mask for use in photolithography with incident light which is at least partially coherent is provided by positioning a transparent material over or under every other transmitting region of the mask. The transparent material has an index of refraction n and a thickness d such that (n-1)d=.PHI..lambda. where .lambda. is the wave length of the incident light, and .PHI. is a fraction between 1/4 and 3/4. 1/4 and 3/4.

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