C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
117/85, 204/91.8
C23C 16/48 (2006.01) C23C 16/04 (2006.01) C23C 16/06 (2006.01)
Patent
CA 1209091
ABSTRACT OF THE DISCLOSURE A process and apparatus for depositing a film from a gas comprising silane and germane involves intro- ducing the gas to a deposition environment containing a substrate, heating the substrate, and irradiating the gas with radiation having a preselected energy spectrum, such that a silicon and germanium alloy film is deposited onto the substrate. In a preferred embodiment, the energy spectrum of the radiation is below or approximately equal to that required to photochemically decompose the gas. In another embodiment, the gas is irradiated through a transparent member exposed at a first surface thereof to the deposition environment, and a flow of substantially inert gaseous material is passed along the first surface to minimize deposition thereon.
428153
Allred David D.
Ovshinsky Stanford R.
Reyes Jaime M.
Walter Lee
Energy Conversion Devices Inc.
Macrae & Co.
LandOfFree
Photo and heat assisted chemical vapour deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photo and heat assisted chemical vapour deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photo and heat assisted chemical vapour deposition will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1300974