H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/475 (2006.01) G03F 1/00 (2006.01) G03F 1/14 (2006.01) G03F 7/20 (2006.01)
Patent
CA 2336569
For the purpose of a sufficient exposure tolerance and a sufficient lithographic process tolerance like the depth of focus while reducing the line width difference due to the patter density of a resist pattern without applying a load to fabrication of a mask, correction is made to the overlapping width a1 of a translucent region of a phase shift mask and a shading region of a binary mask used upon high-resolution exposure (isolated pattern), the overlapping width a2 (L/S pattern), line width b1 in a phase shift mask (isolated pattern) and the line width b2 (L/S pattern) toward decreasing the line width difference among resist patterns when a resist pattern having patterns like an isolated pattern and an L/S pattern that are different in pattern density.
Gowling Lafleur Henderson Llp
Sony Corporation
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