Photo-sensing device

Details Photo-sensing device Photo-sensing device

H - Electricity

01

L

H01L 31/0304 (2006.01) H01L 31/0216 (2006.01) H01L 31/06 (2006.01) H01L 31/105 (2006.01)

Patent

CA 2050363

Abstract of the Disclosure A region of a second conductivity type is selectively formed in a portion of a semiconductive layer of a first conductivity type to form a pn junction area which serves as a photo-sensing region. A metal film is formed on a surface of the semiconductive layer of the first conductivity type to surround the photo-sensing region. When a light to be directed to the photo-sensing region spreads outside the photo-sensing region, the light is reflected by the metal film provided on the surface of the semiconductive crystal layer around the photo-sensing region. Accordingly, the light does not reach the photo-sensing layer of the semiconductive crystal layer and the generation of undesired carriers is prevented.

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