Photochemical vapor deposition apparatus and method

C - Chemistry – Metallurgy – 30 – B

Patent

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204/109, 204/91

C30B 31/00 (2006.01) C23C 16/04 (2006.01) C23C 16/48 (2006.01)

Patent

CA 1181719

ABSTRACT OF THE DISCLOSURE The specification discloses an apparatus and process for use in the photochemical vapor deposition of a selected radiation-opaque material on a target in a photochemical vapor deposition system having a reaction chamber with at least a portion thereof formed of quartz to provide a quartz window therein, and which prevents undesirable deposits on the quartz window to thereby enhance the efficiency and rate of the photochemical vapor deposition process. The apparatus comprises, among other things, a film of a predetermined material, such as a perfluorinated polyether, deposited on the internal face of the quartz window within the reaction chamber, with the predetermined material being characterized by being transparent to a selected wavelength of radiation and having a relatively low adhesive affinity for the selected material being deposited.

390328

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