Photoconductive device

Details Photoconductive device Photoconductive device

H - Electricity

01

L

H01L 31/09 (2006.01)

Patent

CA 2586112

A semiconductor structure includes a GaAs or InP substrate, an InxGa1-xAs epitaxial layer grown on the substrate, where x is greater than about 0.01 and less than about 0.53, and a wider bandgap epitaxial layer grown as a cap layer on top of the InxGa1-xAs epitaxial layer.

La présente invention a trait à une structure semi-conductrice comportant un substrat de GaAs ou d'InP, une couche de croissance épitaxiale de InxGa1-xAs sur le substrat, où x est supérieur à environ 0,01 et inférieur à environ 0,53, et une couche de croissance épitaxiale de bande interdite plus large sous la forme d'une couche d'encapsulation sur la couche de croissance épitaxiale de InxGa1-xAs.

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