Photoconductor element with superimposed layers of ca te and...

Details Photoconductor element with superimposed layers of ca te and... Photoconductor element with superimposed layers of ca te and...

H - Electricity

01

L

96/192, 117/23.3

H01L 27/14 (2006.01) H01J 29/45 (2006.01) H01L 31/11 (2006.01)

Patent

CA 1086547

PHOTOCONDUCTOR ELEMENT AND METHOD OF MAKING THE ELEMENT ABSTRACT OF THE DISCLOSURE This invention relates to a photoconductor element comprising in the following order 1) a material having wider band gap energy than CdTe, 2) a material primarily consisting of CdTe and 3) a material primarily consisting of ZnTe doped with In. The instant material exhibits excellent light sen- sitivity over entire visible light range, a low level of dark current and a high speed of light response. This in- vention further relates to a target for image pickup tube employing the element and a method of making the element.

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