Photoconductor for gaas laser addressed devices

Details Photoconductor for gaas laser addressed devices Photoconductor for gaas laser addressed devices

H - Electricity

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C

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H01C 3/00 (2006.01) H01L 31/0376 (2006.01) H01L 31/09 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1111536

IMPROVED PHOTOCONDUCTOR FOR GaAs LASER ADDRESSED DEVICES Abstract of the Disclosure An improved photoconductor for GaAs laser addressed devices sensitive to illumination at about 1.5 eV is an amorphous material containing silicon, hydrogen and a material taken from the group consisting of Ge, Sn and Pb. A preferred embodiment of this invention is amorphous SixGe1-xHy where x equals 0.78 to 0.93 and y equals 14-20 atomic percent.

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