H - Electricity
01
L
345/27
H01L 31/02 (2006.01) H01L 31/105 (2006.01) H01L 31/12 (2006.01)
Patent
CA 1205551
- 15 - PHOTODETECTOR Abstract Devices useful, for example, as detectors in telecommunications systems have been formed utilizing a specific structure. In particular a p-i-n device is fabricated on a silicon substrate having the necessary circuitry for signal processing. This p-i-n device is produced by depositing an intermediary region having a compositional gradient on this substrate and forming a germanium based p-i-n diode on the intermediary region.
466139
Bean John C.
Kastalsky Alexander
Luryi Sergey
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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