Photodetector

Details Photodetector Photodetector

H - Electricity

01

L

H01L 31/06 (2006.01) H01L 31/0216 (2006.01) H01L 31/075 (2006.01) H01L 31/103 (2006.01) H01L 31/105 (2006.01)

Patent

CA 2054566

ABSTRACT OF THE DISCLOSURE A photodiode comprises e.g. an n-type semiconductor layer, a p-type semiconductor region selectively formed in a central part from a surface of the n-type semiconductor layer, a dish-like shaped pn-junction therebetween, an annular electrode formed on the p-type region, an electrode formed on the other side of the n-type semiconductor layer, and a dielectric layer deposited on the n-type semiconductor layer for preventing light from attaining to the semiconductor layer by reflecting a dielectric multilayer consisting of two different media having effective thicknesses equal to one fourth of the wavelength of the light.

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