Photodetector sensitive to close-range infrareds

H - Electricity – 01 – L

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H01L 31/10 (2006.01) H01L 31/02 (2006.01) H01L 31/0296 (2006.01) H01L 31/103 (2006.01)

Patent

CA 1177943

ABSTRACT OF THE DISCLOSURE In a photodetector having its maximum sensitivity between 0.8 and 2 µm, comprising a P type substrate of Hg1-x Cdx Te, x being selected within a range extending from 0.4 to 0.9, and a doped N-type zone formed on the substrate, the resulting function being of the P-N type, characterized in that x is selected as a function of the desired current gain.

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