Photodiode

Details Photodiode Photodiode

H - Electricity

01

L

345/22, 345/26

H01L 31/0264 (2006.01) H01L 31/0296 (2006.01) H01L 31/101 (2006.01) H01L 31/108 (2006.01)

Patent

CA 2018320

Abstract of the Disclosure In this invention, there is disclosed a new photodiode which comprises a semimetal/semiconductor junction. Distortion of the bands associated with this type of junction result in current flow when an electron hole pair is formed by, for example, a photon impinging upon the junction. The photodiode operates in the photovoltaic mode. However, rather than relying on impurity doping to fabricate a p-n junction, the semimetallic nature of HgTe and its large conduction band offsets with Hg1-xCdx Te are used to create a rectifying Schottky like structure.

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