Photodiode and process for its fabrication

Details Photodiode and process for its fabrication Photodiode and process for its fabrication

H - Electricity

01

L

H01L 21/762 (2006.01) H01L 31/0352 (2006.01) H01L 31/103 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2228408

An active region (6) in an SOI substrate is completely surrounded by a pit (4) filled with insulating material. A first doped region (8) contiguous to the pit is formed in particular by diffusion out of a doped layer on the wall of the pit (4). The first doped region (8) and a second doped region (12) form a pn-junction of a photodiode.

Une zone active (6) dans un substrat en oxyde de silicium monocristallin est entièrement entourée d'un puits (4) rempli d'un matériau isolant. Une première zone dopée (8) adjacente au puits est formée notamment par diffusion d'une couche dopée située sur la paroi du puits (4). La première zone dopée (8) et une deuxième zone dopée (12) forment une jonction pn d'une photodiode.

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