Photodiode structure having an enhanced blue color response

Details Photodiode structure having an enhanced blue color response Photodiode structure having an enhanced blue color response

H - Electricity

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H01L 31/10 (2006.01) H01L 31/103 (2006.01) H01L 31/11 (2006.01)

Patent

CA 1090457

IMPROVED PHOTODIODE STRUCTURE HAVING AN ENHANCED BLUE COLOR RESPONSE ABSTRACT OF THE DISCLOSURE Image detectors and scanners employing n+ - p photodiodes as the photosensitive element tend to have a low blue color response relative to the red color output due to loss of photogenerated carriers near the diode surface because of surface recombination, and because of a small minority carrier lifetime due to the high doping level of the n-region relative to the acceptor doping density of the substrate. The surface recombination and low lifetime cause loss of quantum efficiency at wave- lengths less than 4200 .ANG., which is the blue region. An improved photo- diode is provided including a silicon p substrate, a junction formed by a phosphorous diffusion of low doping density, and a high dose of arsenic or phosphorous ion implantation to provide a shallow implant to create a built-in electric field which repels the photogenerated minority carriers away from the surface and towards the junction to be collected.

282968

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