Photodiode with separate absorption and avalanche zones

Details Photodiode with separate absorption and avalanche zones Photodiode with separate absorption and avalanche zones

H - Electricity

01

L

345/24

H01L 31/14 (2006.01) H01L 31/107 (2006.01)

Patent

CA 1180092

ABSTRACT OF THE DISCLOSURE The invention relates to a photodiode made from materials from group III-V, whose detection effect by photon absorption is amplified by an avalanche, which occurs in a layer separate from the absorption layer. In order to obtain a low amplification noise, it is necessary that the ionization coefficients differ significantly for the electrons and the holes, i.e. the electric field is weak. This field must be exercised over a considerable length to obtain a high gain. The diode according to the invention comprises a substrate, an absorption layer, a field decrease layer, an avalanche layer, all having the same conductivity type, as well as a contact layer with the opposite conductivity type. The field reducing layer and the avalanche layer both satisfy the condition "concentration x length = constant". Application to photodetecting diodes in telecommunications by optical fibres. (Fig 2). -13-

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