Photodiode with sn-doped in2o3 anti-reflective layer

Details Photodiode with sn-doped in2o3 anti-reflective layer Photodiode with sn-doped in2o3 anti-reflective layer

H - Electricity

01

L

345/27

H01L 27/14 (2006.01) H01L 23/48 (2006.01) H01L 31/0216 (2006.01)

Patent

CA 1043892

ABSTRACT The invention relates to a photodiode having a semiconductor body comprising regions of opposite conduc- tivity types which are separated by a p-n junction and of which at least one region has an anti-reflective layer The anti-reflective layer consists of tin-doped indium oxide and forms an ohmic connection with the one region. The tin content of the indium, is between 0.01 and 0.05. weight ratio of tin to indium, is between 0.01 and 0.05.

228641

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