Photoelectric device

H - Electricity – 01 – L

Patent

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345/26, 313/35.2

H01L 31/04 (2006.01) H01J 29/45 (2006.01)

Patent

CA 1060568

ABSTRACT OF THE DISCLOSURE A photoelectric device comprises a signal electrode, a layer of amorphous photoconductor contain- ing 50 atomic percent or more of selenium and an N-type semiconductor layer disposed therebetween, which has a width of the forbidden band of 2.0 eV or higher and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band.

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