Photoelectric device and method of producing the same

Details Photoelectric device and method of producing the same Photoelectric device and method of producing the same

H - Electricity

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L

345/4

H01L 27/14 (2006.01) H01L 27/146 (2006.01) H01L 31/00 (2006.01)

Patent

CA 1145835

PHOTOELECTRIC DEVICE AND METHOD OF PRODUCING THE SAME Abstract of the Disclosure A photoelectric device has an impurity region disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region. A photoconductive layer overlies the electrode layer, and a transparent electrode overlies the photoconductive layer. The invention is characterized in that the photoconductive layer is made of an amorphous chalcogenide material which principally contains Se. Preferably, the amorphous material principally containing Se is partially doped with Te to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following respect. During forming, or after having been formed, the photoconductive layer has an uneven surface. This surface is flattened by heat treatment at a temperature of at least the softening point of the material of the layer. In this way discontinuous parts of the photoconductor ascribable to the uneven surface can be avoided.

353538

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