Photoluminescence spectroscopy control of plasma processing...

H - Electricity – 01 – L

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H01L 21/465 (2006.01)

Patent

CA 2024133

Monitoring wafer changes in situ during plasma treatment provides real-time feedback for developing and controlling device processing. Photoluminescence spectroscopy is described for detecting end points during BCl3plasma etching of hetero epitaxial films of III-V semiconductors and for monitoring H2 plasma passivation of III-V semiconductor surfaces. When used herein the termplasma processing is intended to include the standard dry processes including processes termed reactive ion processing.

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