H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/177
H01L 21/465 (2006.01)
Patent
CA 2024133
Monitoring wafer changes in situ during plasma treatment provides real-time feedback for developing and controlling device processing. Photoluminescence spectroscopy is described for detecting end points during BCl3plasma etching of hetero epitaxial films of III-V semiconductors and for monitoring H2 plasma passivation of III-V semiconductor surfaces. When used herein the termplasma processing is intended to include the standard dry processes including processes termed reactive ion processing.
Gottscho Richard Alan
American Telephone And Telegraph Company
Kirby Eades Gale Baker
LandOfFree
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