Photomask

Details Photomask Photomask

G - Physics

03

F

356/192

G03F 1/14 (2006.01)

Patent

CA 1212182

- 12 - ABSTRACT PHOTOMASK A photomask used to form patterns on a resist- coated semiconductor wafer consists of a transparent fused silica baseplate (52) carrying a metallic pattern (54). A plasma deposited SiO2 electrically resistive coating (56) covers the patterned baseplate. Since the coating (56) is electrically resistive it prevents the building up of static charge on the metal (54) sufficient to cause ablation of the pattern by discharge and since the coating (54) has the same refractive index as the baseplate (52) refraction and reflection at the interface between them is prevented.

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