G - Physics – 03 – F
Patent
G - Physics
03
F
96/211, 96/252,
G03F 7/11 (2006.01) G03F 7/00 (2006.01) H01L 21/027 (2006.01)
Patent
CA 1320300
RD-17,379 use of such silicone polyamic acid, as compared to "Pyralin" polyamic acid, it was found that the problem of premature imidization also occurred during the drying of the applied silicone polyamic acid prior to the spin coating of the photoresist. The work-life of the silicone polyamic acid as well as its usefulness during the development of the applied photoresist also was unsatisfactory. The present invention is based on the discovery that certain silicone polyamic acids, resulting from the use of a siloxane containing norbornane bisanhydride (DiSiAn), shown by Ryang U.S. patent 4,381,396, assigned to the same assignee as the present invention, in combination with benzophenone dianhydride (BTADA) and aryldiamine, have been found to resist excessive imidization during the initial drying step of the silicone polyamic acid after its application to a substrate. Temperatures up to 125°C for a period of 60 minutes can be used to make tack-free silicone polyamic acids which can be readily patterned during the development of a photopatterned photoresist. Surprisingly, the patterned silicone polyamic acid thereafter can be readily removed if used as an antireflective coating. The patterned silicone polyamic acid also can be fully imidized, rendering it substantially insoluble in conventional organic solvents, such as N-methylpyrrolidone in instances where it is used to make a color filter. STATEMENT OF THE INVENTION There is provided by the present invention, a method for patterning adherent silicone polyamide acid on the surface of at least a portion of a substrate, where the silicone polyamic acid is patterned by -2-
565353
Bolon Donald Allen
Eddy Victoria Jean
Hallgren John Edward
Gowling Lafleur Henderson Llp
Microsi Inc.
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