Photoreactive polymers and production of a two-layer resist

Details Photoreactive polymers and production of a two-layer resist Photoreactive polymers and production of a two-layer resist

G - Physics

03

F

96/256, 402/8

G03F 7/038 (2006.01) G03F 7/075 (2006.01)

Patent

CA 1314652

- 18 - Abstract of the Disclosure: Silicon-containing photo- reactive Polymers have N-ylide structures of N-hetero aromatics which undergo photochemical structural and property changes when exposed to actinic light. They are suitable for the production of two-layer photoresists.

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