Photoreceptor construction including an aluminum oxide...

Details Photoreceptor construction including an aluminum oxide... Photoreceptor construction including an aluminum oxide...

G - Physics

03

G

96/182, 314/40

G03G 5/14 (2006.01) G03G 5/047 (2006.01)

Patent

CA 1166502

Abstract Thin photoconductive insulator layers are desirably used because of the reduced amount of materials necessary and their enhanced ability for light transmissi- vity. However, the thin construction tends to reduce the amount of charge that such a photoconductive layer can support. The use of a combined porous and non-porous barrier-charge transport layer below said photoconductive insulator layer enables higher levels of charging in a photoconductive construction.

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