Photoresist composition

G - Physics – 03 – F

Patent

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G03F 7/038 (2006.01) G03F 7/004 (2006.01) G03F 7/039 (2006.01)

Patent

CA 2104247

ABSTRACT OF THE DISCLOSURE A negative photoresist composition comprising an alkali-soluble resin, a crosslinking agent and a photo-induced acid precursor, wherein said photo-induced acid precursor comprises at least one sulfonic acid ester represented by the following formula (I); and a positive photoresist composition comprising an alkali- soluble resin, a dissolution inhibitor and a photo- induced acid precursor, wherein said photo-induced acid precursor comprises at least one sulfonic acid ester represented by the following formula (I): Image (I) wherein R1 represents an optionally substituted arylene, alkylene or alkenylene group; and R2 represents an optionally substituted alkyl or aryl group, provided that when R2 is an alkyl or aryl group having a sub- stituent, said substituent cannot be a fluorine atom. Said negative and positive photoresist compo- sitions are excellent in properties such as heat resist- ance, film thickness retention, coating characteristics, profile, etc. and, in addition, exhibit excellent sensitivity and resolution when used in the exposure light region using a far ultraviolet ray, including excimer laser, as a light source.

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