G - Physics – 03 – F
Patent
G - Physics
03
F
G03F 7/038 (2006.01) G03F 7/004 (2006.01) G03F 7/30 (2006.01) G03F 7/40 (2006.01) G03F 7/11 (2006.01)
Patent
CA 2551875
Photoresist compositions that demonstrate superior photolithographic performance and hardened resist films that show superior resistance to solvents, have excellent resistance to under plating during the electrodeposition of metals, and show excellent resist stripping characteristics. These photoresist compositions according to the invention are well-suited as for applications in the manufacture of MEMS and micromachine devices. These photoresist compositions according to the invention comprise one or more epoxide-substituted, polycarboxylic acid Resin Component (A), one or more photoacid generator compounds (B), and one or more solvent (C).
L'invention concerne des compositions de photorésine aux performances photolithographiques supérieures et des films de résine durcis ayant une résistance supérieure aux solvants, une excellente résistance à un sous-placage pendant le dépôt électrolytique de métaux et d'excellentes caractéristiques de décapage de résine. Ces compositions de photorésine selon l'invention conviennent parfaitement à des applications dans la production de MEMS et de dispositifs micro-machine. Ces compositions de photorésine selon l'invention comprennent au moins un composant de résine (A) acide polycarboxylique substitué par un époxyde, au moins un composé (B) générateur photo-acide et au moins un solvant (C)
Honda Nao
Mori Satoshi
Weber William
Microchem Corp.
Nippon Kayaku Co. Ltd.
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
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