Photoresist processing solution

G - Physics – 03 – F

Patent

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96/256, 260/594.

G03F 7/26 (2006.01) G03F 7/32 (2006.01) G03F 7/42 (2006.01)

Patent

CA 1257610

ABSTRACT The invention relates to a photoresist processing solution comprising (a) a quaternary ammonium hydroxide of the formula I Image (I) wherein R, R1 and R2 which may be the same or different are each an alkyl group having 1 to 5 carbon atoms; and n is a positive number of 1 to 10; and (b) water or a water-miscible organic sol- vent. The invention further relates to compounds of formula I and to a process for preparing a photoresist stencil using the above solutions. The processing solutions are useful as etchants for photoresist materials and reduce contamination of wafer substrates whilst retaining good selectivity in dissolving the target resin film.

492431

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